ABSTRACT

The lV-Vl compounds are technologically important in view of their applications in detectors and IR lasers.in this work the pulse-plating technique has been employed for the deposition of snse films at different duty cycles.the films were polycrystalline with peaks corresponding to the orthorhobic structure.the grain size varied in the range of 40-80nm was increase of duty cycle.the surface roughness of films varied from 0.5to1.5nm.The band gap increased from 1.26-1.50ev  with duty cycle.photoeletrochemical cell studies indicated 4.93% efficiency at 60 mW cm-2 illumination after photoetching.

keywords:lV-Vl,snse thin films,semiconductor electronic material.