In this work, the pulse electrodeposition technique has been employed for the first time to deposit AglnSe2 films. AglnSe2 films were deposited by the pulse electrodeposition technique at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO2. The deposition potential was maintained as - 0.98V (SCE). Tin oxide coated glass substrates (5.0 ohms/sq) was used as the substrate. The duty cycle was varied in the range of 6 - 50%. The XRD profile of the thin films deposited at different duty cycles indicate the peaks corresponding to AglnSe2. The transmission spectra exhibited interference fringes. Refractive index decreased from 2.5 to 1.8 in the wavelength range of 500 - 1500 nm. The room temperature resistivity increased from 0.1 ohm cm to 10 ohm cm with decrease of duty cycle. Photoelectrochemical cell studies indicated an open circuit voltage of 0.55 V and a short circuit current density of 5.0 mA cm-2 at 60 mW cm-2 illumination for the films deposited at 50 % duty cycle.